1 IRFIB5N65a www.irf.com smps mosfet hexfet ? power mosfet l switch mode power supply (smps) l uninterruptible power supply l high speed power switching l high voltage isolation = 2.5kvrms ? benefits applications l low gate charge qg results in simple drive requirement l improved gate, avalanche and dynamic dv/dt ruggedness l fully characterized capacitance and avalanche voltage and current v dss r ds(on) max i d 650v 0.93 w 5.1a typical smps topologies l single transistor flyback notes ? through ? are on page 8 l single transistor forward parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 5.1 i d @ t c = 100c continuous drain current, v gs @ 10v 3.2 a i dm pulsed drain current ? 21 p d @t c = 25c power dissipation 60 w linear derating factor 0.48 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt ? 2.8 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings 6/21/00 s d g to-220 full-pak pd-91816b
IRFIB5N65a 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 3.9 CCC CCC s v ds = 50v, i d = 3.1a q g total gate charge CCC CCC 48 i d = 5.2a q gs gate-to-source charge CCC CCC 12 nc v ds = 400v q gd gate-to-drain ("miller") charge CCC CCC 19 v gs = 10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 14 CCC v dd = 325v t r rise time CCC 20 CCC i d = 5.2a t d(off) turn-off delay time CCC 34 CCC r g = 9.1 w t f fall time CCC 18 CCC r d = 62 w ,see fig. 10 ? c iss input capacitance CCC 1417 CCC v gs = 0v c oss output capacitance CCC 177 CCC v ds = 25v c rss reverse transfer capacitance CCC 7.0 CCC pf ? = 1.0mhz, see fig. 5 c oss output capacitance CCC 1912 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 48 CCC v gs = 0v, v ds = 520v, ? = 1.0mhz c oss eff. effective output capacitance CCC 84 CCC v gs = 0v, v ds = 0v to 520v ? dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ? CCC 325 mj i ar avalanche current ? CCC 5.2 a e ar repetitive avalanche energy ? CCC 6 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.5 v t j = 25c, i s = 5.2a, v gs = 0v ? t rr reverse recovery time CCC 493 739 ns t j = 25c, i f = 5.2a q rr reverse recoverycharge CCC 2.1 3.2 c di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 5.2 21 a thermal resistance parameter typ. max. units r q jc junction-to-case CCC 2.1 r q ja junction-to-ambient CCC 65 c/w parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 650 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.67 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.93 w v gs = 10v, i d = 3.1.a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a CCC CCC 25 a v ds = 650v, v gs = 0v CCC CCC 250 v ds = 520v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current
IRFIB5N65a www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 v = 100v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 5.2a
IRFIB5N65a 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 5.2a v = 130v ds v = 325v ds v = 520v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 10 100 1000 10000 operation in this area limited by r ds(on) sin g le pulse t t = 150 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 400v 0 400 800 1200 1600 2000 1 10 100 1000 c, capacitance (pf) ds v , drain-to-source volta g e ( v ) a v = 0v, f = 1mhz c = c + c , c s ho rted c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss
IRFIB5N65a www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temperature ( c) i , drain current (a) c d
IRFIB5N65a 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v fig 12d. typical drain-to-source voltage vs. avalanche current 700 720 740 760 780 800 0123456 a dsav av i , avalanche current ( a ) v , avalanche voltage (v) 25 50 75 100 125 150 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.3a 3.3a 5.2a
IRFIB5N65a www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
IRFIB5N65a 8 www.irf.com to-220 full-pak part marking information to-220 full-pak package outline dimensions are shown in millimeters (inches) lead assignments 1 - g a t e 2 - d ra in 3 - s o u r ce notes: 1 dimensioning & tolerancing pe r a ns i y 14.5 m , 1 9 82 2 controlling dimension: inch. d c a b minimum creepage distance betw een a-b-c -d = 4.80 (.189) 3x 2.85 (.112) 2.65 (.104) 2.80 (.110) 2.60 (.102) 4.80 (.189) 4.60 (.181) 7.10 (.280) 6.70 (.263) 3.40 (.133) 3.10 (.123) ? - a - 3.70 (.145) 3.20 (.126) 1.15 (.045) m in . 3.30 (.130) 3.10 (.122) - b - 0.90 (.035) 0.70 (.028) 3x 0.25 (.010) m a m b 2.54 (.100) 2x 3x 13.70 (.540) 13.50 (.530) 16.00 (.630) 15.80 (.622) 1 2 3 10.60 (.417) 10.40 (.409) 1.40 (.055) 1.05 (.042) 0.48 (.019) 0.44 (.017) part number international r ec tif ie r lo g o date code (yyw w ) yy = year w w = w eek assembly lot co de e401 9245 irfi840g e x am p le : th is is a n irfi840g w ith assembly lo t co de e 401 a ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) ? i sd 5.2a, di/dt 90a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 24mh r g = 25 w , i as = 5.2a. (see figure 12) ? pulse width 300s; duty cycle 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss ? t=60s, f=60hz ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 6/00
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